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MBR4035PT thru MBR4060PT
Vishay General Semiconductor
www.vishay.com For technical questions within your
region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88679
Revision: 25-Mar-08
2
Note:
(1) Pulse test: 300 μs pulse
width, 1 % duty cycle
RATINGS AND CHARACTERISTICS CURVES
(TA
= 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TA
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL MBR4035PT MBR4045PT MBR4050PT MBR4060PT UNIT
Maximum instantaneous
forward voltage per diode (1)
IF
= 20 A,
IF
= 20 A,
IF
= 40 A,
IF
= 40 A,
TC
= 25 °C
TC
= 125 °C
TC
= 25 °C
TC
= 125 °C
VF
0.70
0.60
0.80
0.75
0.72
0.62
-
-
V
Maximum instantaneous
reverse current at rated DC
blocking voltage per diode (1)
TC
= 25 °C
TC
= 125 °C
IR
1.0
100
mA
THERMAL CHARACTERISTICS (TA
= 25 °C unless otherwise noted)
PARAMETER SYMBOL MBR4035PT MBR4045PT MBR4050PT MBR4060PT UNIT
Maximum thermal resistance from junction to case per diode RθJC
1.2 °C/W
ORDERING INFORMATION
(Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-247AD MBR4045PT-E3/45 6.13 45 30/tube Tube
Figure 1. Forward Current Derating Curve
0
50
100
150
0
10
20
30
40
50
A
v
erage For
w
ard C
u
rrent (A)
Case Temperature (°C)
Resistive or Inductive Load
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
1
10
100
100
200
300
400
Number of Cycles at 60 Hz
Peak For
w
ard S
u
rge C
u
rrent (A)
TJ
= T
J
Max.
8.3 ms Single Half Sine-Wave
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